ElectronPhonon and ElectronElectron Interactions in Quantum Transport.
Abstract
The objective of this work is to shed light on electron transport through submicron semiconductor structures, where electronic state quantization, electronelectron interactions and electronphonon interactions are important. We concentrate here on the most developed vertical quantum device, the double barrier resonant tunneling diode. This thesis analyzes particle interactions in two structural limits: (1) large, and (2) small crosssections, in which the treatments are fundamentally different. Large cross section structures involve particleinteractions with many electrons and these effects can be described in the Keldysh formalism in a singleparticle picture by effective potentials. We present model calculations treating the phononpeak and electrical bistability in this limit. Small crosssection structures involve only a few particles, whose interactions cannot be described by effective potentials, due to strong particle correlations. The singleparticle picture breaks down and a full manybody description has to be used. We present high bias calculations for electron transport through single quantum dots (artificial atoms) and an analysis of the linear response conductance spectrum of two coupled quantum dots (artificial molecules).
 Publication:

Ph.D. Thesis
 Pub Date:
 1994
 Bibcode:
 1994PhDT.......113K
 Keywords:

 Engineering: Electronics and Electrical; Physics: Condensed Matter; Physics: Electricity and Magnetism