The Electrical and Optical Properties of Doped Yttrium Aluminum Garnets

The electrical and optical properties of YAG, Nd:YAG, Ti:YAG, and Zr:YAG were studied and quantitatively correlated to determine defect models for the defect structure of these systems. Correlations of these independent measurements were essential, as defect models derived from electrical or optical measurements alone were inconclusive. The correlated defect model provided a new interpretation for the electrical and optical properties of Ti:YAG. This defect model was then tested by checking its predicted dependence of Ti:YAG's optical properties with PO_2. This prediction was experimentally verified. Most of the systems were found to have a defect structure controlled by inadvertent background acceptors compensated by oxygen vacancies. This structure led to a characteristic conductivity isotherm where the conductivity varied as PO_2^{-1/4} for reduced PO_2's, and approached PO_2 independence for oxidizing PO_2's. Only for a heavily doped Zr:YAG sample was a new defect structure encountered. For this sample, an extrinsically compensated defect structure was detected, with the Zr^{+4} ions compensating the background acceptors. The conductivity isotherm for this sample had a n-type like component that varied as PO_2^{ -1/6}.. Quantitative correlations of the electrical and optical properties also provided a deep insight into the nature of the optical properties, and how these properties change as a function of oxidizing and reducing anneals. Correlations of this type were used to locate the energy level positions of rm Fe^{+2}, Ti ^{+3}, Zr^{+3}, and rm V_{o}^ {cdotcdot} in the YAG bandgap. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253 -1690.).