Power added efficiency and gain improvement in MESFET amplifiers using an active harmonic loading technique
Abstract
A six-port-based multiharmonic load-pull setup is used to characterize a medium-power MESFET transistor for the design of microwave amplifiers. Complete load-pull measurements at the fundamental (1.7 GHz) and the second harmonic (3.4 GHz) are obtained for two bias points in class A and AB operation. It is shown that the power gain and the power added efficiency can vary up 0.6 dB and 6%, respectively, as the phase of the second harmonic load is changed.
- Publication:
-
Microwave and Optical Technology Letters
- Pub Date:
- September 1994
- Bibcode:
- 1994MiOTL...7..625G
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Microwave Amplifiers;
- Power Amplifiers;
- Power Efficiency;
- Power Gain;
- Transistor Amplifiers;
- Computerized Simulation;
- Harmonic Generations;
- Semiconductor Junctions;
- Electronics and Electrical Engineering