Reactive ion etching of RuO<SUB>2</SUB> thin films using the gas mixture O<SUB>2</SUB>/CF<SUB>3</SUB>CFH<SUB>2</SUB> - NASA/ADS

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Reactive ion etching of RuO₂ thin films using the gas mixture O₂/CF₃CFH₂

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Publication:: Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
Pub Date:: November 1994
DOI:: 10.1116/1.587501
Bibcode:: 1994JVSTB..12.3208P

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