Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma
Abstract
- Publication:
-
Journal of Vacuum Science Technology A: Vacuum Surfaces and Films
- Pub Date:
- May 1994
- DOI:
- 10.1116/1.578850
- Bibcode:
- 1994JVSTA..12..665J