Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma - NASA/ADS

Now on home page

References

Co-Reads

Volume Content

Graphics

Export Citation

NASA/ADS

Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma

Publication:: Journal of Vacuum Science Technology
Pub Date:: May 1994
Bibcode:: 1994JVST...12..665J