Growth and characterization of some 1-3-6(2) compound semiconductors
Abstract
Single crystals of CuInS2, CuInSe2, CuInTe2, CuGaS2, AgGaS2 CuInSSe, AgGaSSe have been grown by chemical vapor transport technique on the basis of a new general thermodynamical model which enables the minimum source temperature T(sub s), and the minimum deposition temperature, T(sub d), to be determined. X-ray analysis, X-ray photoelectron spectroscopic analysis, surface analysis, and microhardness studies have been carried out on the single crystals grown.
- Publication:
-
Journal of Materials Science
- Pub Date:
- April 1994
- DOI:
- 10.1007/BF00351308
- Bibcode:
- 1994JMatS..29.1879B
- Keywords:
-
- Copper Selenides;
- Crystal Growth;
- Deposition;
- Indium Compounds;
- Semiconductors (Materials);
- Single Crystals;
- Spectroscopic Analysis;
- X Ray Analysis;
- Microhardness;
- Photoelectrons;
- Vapors;
- Electronics and Electrical Engineering