Optical deep-level transient conductance characterization of semi-insulating gallium arsenide treated with hydrogen plasma
Abstract
Optical deep-level transient conductance spectroscopy (ODLTCS) has been employed to characterize Schottky devices fabricated on liquid encapsulation Czochralski (LEC) semi-insulating (SI) GaAs material which has been exposed to low-pressure microwave (2.42 GHz) H2 plasma. A range of substrate temperatures and exposure times to the plasma were tested. The change in device conductance suggests that there is an optimal plasma condition for the passivation of defects by atomic H with the formation of neutral defect-H (DH) complexes.
- Publication:
-
Japanese Journal of Applied Physics Regular Papers Short Notes and Review Papers
- Pub Date:
- January 1994
- Bibcode:
- 1994JJAPR..33..199L
- Keywords:
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- Gallium Arsenides;
- Hydrogen;
- Hydrogen Plasma;
- Low Pressure;
- Microwaves;
- Czochralski Method;
- Plasma Spraying;
- Electronics and Electrical Engineering