Damage formed by Si(+) implantation in GaAs
Abstract
Damage formed by low-dose Si(+) implantation is studied. Variation of damage density with dose in Si(+) implantation at 50 keV is measured at doses from 3.0 x 10(exp 10) to 1.0 x 10(exp 14) ions/sq cm by the photoacoustic displacement (PAD) technique. A close correlation has also been found between the PAD value and ion implantation dose in low-dose ion implantation. Ion implantation dose can be monitored down to 3.0 x 10(exp 10) ions/sq cm by this technique. This dose detection limit is much lower than that of other methods. The in-depth damage profile can also be measured by differentiating the observed PAD values with depth.
- Publication:
-
Japanese Journal of Applied Physics Letters B
- Pub Date:
- October 1994
- Bibcode:
- 1994JJAPL..33L1435H
- Keywords:
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- Crystal Dislocations;
- Crystals;
- Damage Assessment;
- Gallium Arsenides;
- Ion Implantation;
- Laser Damage;
- Mathematical Models;
- Semiconductor Lasers;
- Silicon;
- Backscattering;
- Correlation;
- Depth Measurement;
- Dosage;
- Photoacoustic Spectroscopy;
- Raman Spectra;
- Electronics and Electrical Engineering