Determination of ionization energies of the nitrogen donors in 6H-SiC by admittance spectroscopy
Abstract
The nitrogen donor levels have been studied by admittance spectroscopy between 20 and 200 K in Schottky barriers made on lightly n-type epitaxial 6H-SiC layers. Measurements at different frequencies yield different freezeout temperatures which in turn are used to determine the donor level energies. Two electron traps at Ec-0.082 eV and at Ec-0.140 eV were detected. These levels are associated with nitrogen, respectively, at the hexagonal sites for the former and at the cubic sites for the latter level.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- August 1994
- DOI:
- 10.1063/1.357655
- Bibcode:
- 1994JAP....76.1956R
- Keywords:
-
- Activation Energy;
- Donor Materials;
- Electrical Properties;
- Nitrogen;
- Schottky Diodes;
- Silicon Carbides;
- Temperature Effects;
- Capacitance-Voltage Characteristics;
- Cryostats;
- Electrical Impedance;
- Electrical Resistivity;
- Spectroscopy;
- Solid-State Physics