Dependence of thin film transistor characteristics on the deposition conditions of silicon nitride and amorphous silicon
Abstract
The systematic relation between thin film transistors' (TFT's) characteristics and the deposition conditions of amorphous silicon nitride (a-SiN) films and hydrogenated amorphous silicon (a-Si:H) films is investigated. It is observed that field effect mobility mu(sub FE) and threshold voltage V(sub th) of the TFT's strongly depend on the deposition conditions of these films. The maximum mu(sub FE) of 0.88 sq cm/(V x s) is obtained for the TFT of which a-SiN film is deposited at a pressure of 85 Pa. This phenomenon is due to the variation of the interface states density between a-Si:H film and a-SiN film.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1994
- DOI:
- 10.1109/16.278501
- Bibcode:
- 1994ITED...41..499M
- Keywords:
-
- Amorphous Silicon;
- Deposition;
- Display Devices;
- Electrical Properties;
- Liquid Crystals;
- Semiconductor Devices;
- Silicon Films;
- Silicon Nitrides;
- Thin Films;
- Transistors;
- Hydrogenation;
- Threshold Voltage;
- Electronics and Electrical Engineering