Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer
The temperature dependence of optical gain in strained quantum well is analyzed taking account of carriers in the separate confinement heterostructure (SCH) layer. Taking account of these carriers in the SCH layer can explain to a considerable extent the difference in the temperature performance between the lambda = 0.98 micron laser and lambda = 1.3 microns laser. It is shown that well depth plays a crucial role for the temperature dependence of optical gain. A strained quantum well on an InGaAs ternary substrate is shown to give a high gain with a small temperature dependence.