Approximation to the factor K in the TohKoMeyer MOS engineering model
Abstract
An approximate expression for the factor K used in the TohKoMeyer MOS engineering model is derived. The approximate expression presented allows one to compute directly the saturation current and the saturation voltage with given device dimensions and biasing voltages without the need for iteration.
 Publication:

IEEE Journal of SolidState Circuits
 Pub Date:
 January 1994
 DOI:
 10.1109/4.272100
 Bibcode:
 1994IJSSC..29...77L
 Keywords:

 Approximation;
 Electric Networks;
 Equivalent Circuits;
 Integrated Circuits;
 Metal Oxide Semiconductors;
 Network Analysis;
 Network Synthesis;
 Electric Current;
 Electric Potential;
 Mathematical Models;
 Electronics and Electrical Engineering