Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Abstract
Candela-class high-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn-doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 1994
- DOI:
- 10.1063/1.111832
- Bibcode:
- 1994ApPhL..64.1687N
- Keywords:
-
- Aluminum Compounds;
- Electroluminescence;
- Heterojunctions;
- Indium Compounds;
- Light Emitting Diodes;
- Luminous Intensity;
- Quantum Efficiency;
- Quantum Theory;
- Semiconductors (Materials);
- Additives;
- Electric Current;
- Semiconducting Films;
- Spectrum Analysis;
- Vapor Deposition;
- Zinc;
- Electronics and Electrical Engineering