Magnetopolaron effect on shallow donor states in GaAs
Abstract
We report a theoretical investigation of the resonant donor magnetopolaron in GaAs. The energy levels of the ground state (1slike) and eight excited states (2s, 2p^{+/}, 2p_{z}, 3d^{+/2}, 4f^{+/3}like) of the donor have been obtained as a function of the magneticfield strength (B). The calculation is based on a variational approach in which we use a trial wave function with two variational parameters for all states but three for the 2s state. This approach gives (1) the exact energy values in the limits of B=0, and (2) the energy levels that are very close to known more exact calculations at high magnetic fields. The magnetopolaron effect on these energies is studied within secondorder perturbation theory. In order to explain the available experimental results it is sufficient to take into account the seven lowest donor states (1s, 2s, 2p^{+/}, 2p_{z}, 3d^{2}, 4f^{3}) and to include band nonparabolicity. Our results are in very good agreement with the available experimental data.
 Publication:

Physical Review B
 Pub Date:
 August 1993
 DOI:
 10.1103/PhysRevB.48.5202
 Bibcode:
 1993PhRvB..48.5202S
 Keywords:

 71.38.+i;
 71.55.Eq;
 78.20.Ls;
 IIIV semiconductors;
 Magnetooptical effects