AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications
Abstract
This work determined that RF drain current degradation is responsible for the poor power performance of wide-recessed PHEMT. A model based on surface states was proposed to explain this phenomenon, which then led to the use of charge-screen layers and a double-recessed gate process to suppress surface effects. Combined, these two modifications increased the device's gate-drain reverse breakdown voltage without causing a degradation in the transistor's RF drain current. This allowed the simultaneous achievement of high power-added efficiency and high power density which established a new performance record for power PHEMTs at X- and Ku-bands. Delay time analyses of single- and double-recessed PHEMTs revealed that the benefit of a larger breakdown voltage in the latter device design came at the cost of a larger drain delay time. Drain delay accounted for 45% of the total delay when the 0.35 micron, double-recessed PHEMT was biased at V(sub ds) = 6V.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- May 1993
- DOI:
- 10.1109/22.234507
- Bibcode:
- 1993ITMTT..41..752H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Electric Potential;
- Electrical Faults;
- High Electron Mobility Transistors;
- Indium Gallium Arsenides;
- Radio Frequencies;
- Semiconductors (Materials);
- Superhigh Frequencies;
- Bias;
- Degradation;
- Electric Current;
- Gates (Circuits);
- Millimeter Waves;
- Electronics and Electrical Engineering