High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction
Abstract
In this letter we report the fabrication and dc characterization of a high electron mobility transistor (HEMT) based on a n-GaN-Al0.14Ga0.86N heterojunction. The conduction in our low pressure metalorganic chemical vapor deposited heterostructure is dominated by two-dimensional electron gas at the heterostructure interface. HEMT devices were fabricated on ion-implant isolated mesas using Ti/Au for the source drain ohmic and TiW for the gate Schottky. For a device with a 4 μm gate length (10 μm channel opening, i.e., source-drain separation), a transconductance of 28 mS/mm at 300 K and 46 mS/mm at 77 K was obtained at +0.5 V gate bias. Complete pinchoff was observed for a -6 V gate bias.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 1993
- DOI:
- 10.1063/1.109775
- Bibcode:
- 1993ApPhL..63.1214A