High-Rate Vapor Deposition of Cadmium Telluride Films for Solar Cells

High rate vapor deposition is presently used for large scale low cost deposition of thin films for packaging and other applications. The feasibility of using this technology for low cost deposition of solar cells was explored. After an exhaustive literature survey, the cadmium telluride (CdTe) solar cell was found to be most suitable candidate for high rate vapor deposition. The high rate vapor deposition was investigated by sublimation with a short distance between sublimation source and the substrate (Close-Spaced Sublimation, CSS). Cadmium telluride (CdTe) solar cells were fabricated by depositing CdTe films at different rates on cadmium sulphide (CdS) films deposited by CSS or by evaporation. The CdTe films deposited at higher deposition rates were observed to have open circuit voltages (V_{ rm oc}) comparable to those deposited at lower rates. The effect of CdS film which acts as window layer for the cells were also investigated on the V_ {rm oc} of the solar cells. The results achieved proved the fact that CdS window layer is necessary to achieve higher V_{ rm oc} from solar cells. The substrate temperature during deposition of films by close space sublimation plays a vital role in the performance of solar cell. The increase in the substrate temperature during deposition of CdTe films increased the V_{rm oc} of solar cells. The solar cells with indium tin oxide (ITO) as top conductor, i.e. ITO/CdS/CdTe configuration were fabricated at rates up to 34 mum/minute and with tin oxide (TO) i.e. TO/CdTe configuration fabricated at rates up to 79 mum/minute have shown similar V_{rm oc} compared to those produced at lower rates. Higher CdTe film deposition rates are possible with larger capacity experimental setup. The method of contacting CdTe, used in this study, results in higher series resistance. An improved method of contacting CdTe needs to be developed.