a Study of Free Hole Carrier Absorption Coefficient and the Internal Loss Mechanisms of Indium Gallium Arsenide Phosphide/indium Phosphide Semiconductor Diode Lasers
Abstract
The loss mechanisms of 1.3-μm and 1.55-μm InGaAsP/InP diode lasers are studied. These losses result in low differential quantum efficiency eta_{rm d} and sublinear Power-Current (P-I) curves. To study these losses the second order transitions of the free holes were calculated. The first order transitions had been calculated previously. By using the results of the first and the second order free hole transitions and the observed increase of the injected carrier density with the applied current above the threshold, dn/dI, for 1.3-mu m diode lasers the causes of loss in these diode lasers are explained. While temperature dependent proposals designed to explain the low value of eta _{rm d} and sublinear P-I curves have been proven wrong by measurements, this dissertation presents for the first time a temperature-independent argument that explains the above problems and is in agreement with the experimental data for 1.3-μm diode lasers. There are no measurements of dn/dI above the threshold for 1.55-μm diode lasers, but calculated value for 1.55-mu m diode lasers are proposed for verification by experimental measurements.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- January 1992
- Bibcode:
- 1992PhDT........94F
- Keywords:
-
- INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE;
- Physics: Optics; Physics: Condensed Matter