The structure and parameters of YBCO films on a silicon substrate as a function of the structure of an intermediate YSZ layer
Abstract
A study of the structure and properties of YBCO/YSZ/Si film systems indicates that the parameters of YBCO films depend strongly on the structure of the intermediate layer. The presence of the native oxide on the surface of the silicon substrate disturbs the epitaxial growth of YSZ films. Intermediate YSZ layers with a small fraction of the misoriented polycrystalline phase make it possible to significantly reduce the chemical interaction between the YBCO film and the silicon substrate.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- October 1992
- Bibcode:
- 1992PZhTF..18...29B
- Keywords:
-
- Crystal Structure;
- High Temperature Superconductors;
- Thin Films;
- Ybco Superconductors;
- Zirconium Oxides;
- Substrates;
- Superconducting Films;
- Temperature Dependence;
- Solid-State Physics