Location of misfit dislocation networks and channeling stopping power measurements in strained-layer superlattices by RBS
A backscattering angle-dependent dechanneling analysis is presented for the location of a misfit dislocation network in strained layers and strained-layer superlattices. Simultaneously this RBS/channeling method permits the determination of the ratio of channeling to the random stopping cross section. An In 0.18Ga 0.82As/GaAs strained-layer superlattice on (100) GaAs layer superlattice is analyzed with 1.7 MeV He ions. The misfit dislocation network is located at the superlattice-substrate interface. The ratio of <100> channeling to the random stopping cross section γ = 0.61 is determined at the He ion energy of 1.63 MeV.