A thin film technique applied to detect striking contrast of chemical reaction of recoil-implanted atoms to hot atom reaction inside solid systems
In identically irradiated targets of a thin film system of Pd-Rh(acac) 3, the parent type yield of 105Rh(acac) 3 obtained by recoil implantation reaction was much larger than that of 102Rh(acac) 3 derived from inner hot atom reaction. This difference could not be explained by the ordinary "isotope effect", but could be connected with collisional sequences. The yield of implantation chemical reaction increased with the increase of mean implantation energy up to 100 keV. The range of increase was closely correlated with the maximum of the nuclear stopping power Sn in the system.