Resonance depth profiling of low-Z elements with target biasing applied to the 3.045 MeV 16O(α, α) 16O resonance
Resonance scanning represents an alternative to Rutherford backscattering spectrometry for the quantitative depth profiling of light elements in high-Z substrates. An alternative to automatic energy scanning devices, which are based on "fooling" the slit-control system, is presented. For the actual energy variation the target biasing technique is used. The principles are described as well as some intrinsic restrictions to this technique. Tilting the target to increase the depth resolution is impeded by the influence of the electrical field gradients under glancing incidence conditions. Under these glancing angles the beam is influenced by the target potential. The target biasing technique is applied to the resonance oxygen probing in oxide layers with the 3.045 MeV 16O(α,α) 16O resonance.