Analysis on Electric Field Effect in Al/SrTiO3/YBa2Cu3Oy Structure
Abstract
Planar-type Al/(100)SrTiO3/(001)YBa2Cu3Oy metal-insulator-superconductor field-effect transistors (MISFETs) were investigated experimentally and theoretically. The applied gate field induces the change of the carrier concentration in YBa2Cu3Oy channel (or conducting layer thickness), which in turn modulates the critical current Jc through the flux-creep model and flux-flow resistivity ρt through the Bardeen-Stephen model. Theoretical results explained, to a certain extent, the observed field effect in the MISFET semiquantitatively.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- September 1992
- DOI:
- 10.1143/JJAP.31.L1342
- Bibcode:
- 1992JaJAP..31L1342M
- Keywords:
-
- Aluminum;
- Electric Fields;
- Field Effect Transistors;
- Strontium Titanates;
- Ybco Superconductors;
- Carrier Density (Solid State);
- Gates (Circuits);
- Superconducting Films;
- Thin Films;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering