Low-Operation-Voltage Comb-Shaped Field Emitter Array
Abstract
The dependence of emission properties on the structure of comb-shaped lateral field emitter arrays (FEAs) has been investigated. The present FEA consists of an array of rectangular emitter tips with 3 μm-wide edges and a gate self-aligned to the emitter. It was found from experimental results that the ratio of pitch ({=}p) to edge width ({=}a) of the array had a strong influence on the emission properties, and that p/a∼3 was an optimum ratio to lower the operation voltage. Under this condition, an emission current of 1.4 μA/tip was obtained at a gate voltage of 110 V.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- July 1992
- DOI:
- 10.1143/JJAP.31.L884
- Bibcode:
- 1992JaJAP..31L.884I
- Keywords:
-
- Arrays;
- Emitters;
- Field Emission;
- Gates (Circuits);
- Microelectronics;
- Vacuum;
- Diodes;
- Metal Films;
- Tungsten;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering