Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells
Abstract
Novel dual wavelength electro-optical bistability has been demonstrated in a resistor biased InGaAs/AlGaAs multiple quantum well self electro-optic effect device by the use of n{=}1 and n{=}2 electron to heavy-hole exciton states. A new concept is proposed to obtain a dual wavelength optical set-reset latch in a single device structure, and the clear bistable operation is evidenced by photocurrent switching experiments. Advantages of this new device configuration are discussed.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- March 1992
- DOI:
- 10.1143/JJAP.31.L313
- Bibcode:
- 1992JaJAP..31L.313G
- Keywords:
-
- Aluminum Gallium Arsenides;
- Electro-Optics;
- Indium Gallium Arsenides;
- Optical Bistability;
- Optical Switching;
- Quantum Wells;
- Photoconductivity;
- Resistors;
- Stark Effect;
- Volt-Ampere Characteristics;
- Optics