Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular-beam epitaxially grown GaAs(001)
Abstract
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- July 1992
- DOI:
- 10.1116/1.586215
- Bibcode:
- 1992JVSTB..10.1874P