High permeability of iron-nitride films prepared by ion beam deposition using NH 3
Abstract
FeN thin were deposited by using a Facing Targets type of Ion Source (FTIS). NH 3 seemed to be more suitable than N 2 ad reactive gas to prepare FeN films with larger 4 πMs and higher permeability μr. The films deposited at PNH3 of 0.04 m Torr exhibited μr as high as about 3000 after post-annealing at 150°C.
- Publication:
-
Journal of Magnetism and Magnetic Materials
- Pub Date:
- July 1992
- DOI:
- 10.1016/0304-8853(92)91211-B
- Bibcode:
- 1992JMMM..112..392N