Selective area epitaxy of InP/GaInAsP heterostructures by MOMBE
Abstract
This study reports on the selective area growth of InP/GaInAsP layers and heterostructures by metaloganic molecular beam epitaxy (MOMBE). It was found that neither the growth rate nor the material composition for GaInAsP depends on the area where material growth takes place. This enables a flexible SiO 2 mask to be designed independent of the aspect ratio. The use of slightly misoriented substrates allows the selective growth of planar structures having nearly perfectly vertical side walls even for 2 μm thick layers or narrow stripes to take place.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- May 1992
- DOI:
- 10.1016/0022-0248(92)90421-E
- Bibcode:
- 1992JCrGr.120..376H
- Keywords:
-
- Indium Gallium Arsenides;
- Indium Phosphides;
- Molecular Beam Epitaxy;
- Organometallic Compounds;
- Electron Microscopy;
- Hall Effect;
- Optoelectronic Devices;
- Silicon Dioxide;
- Surface Properties;
- Solid-State Physics