InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxy
Abstract
We have grown In 1- xGa xAs yP 1- y/InP multiple quantum well structures with 1.3 μm excitonic absorption at room temperature by gas-source molecular beam epitaxy. In-situ composition determination in GaAs 1- xP x and InAs xP 1- x was carried out by measuring group-V-induced intensity oscillations of reflection high-energy electron diffraction. Based on the in-situ composition calibration for these ternary end members, Ga and As compositions in the quaternary compound, In 1- xGa xAs yP 1- y, were controlled successfully. Measurements by X-ray rocking curve, low-temperature photoluminescence and absorption spectroscopy indicate that high-quality In 1- xGa xAs yP 1- y/InP multiple quantum well samples were obtained.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- May 1992
- DOI:
- 10.1016/0022-0248(92)90384-U
- Bibcode:
- 1992JCrGr.120..167H
- Keywords:
-
- Indium Gallium Arsenides;
- Indium Phosphides;
- Molecular Beam Epitaxy;
- Quantum Wells;
- Absorption Spectra;
- Crystal Structure;
- Electron Diffraction;
- Energy Gaps (Solid State);
- Optical Properties;
- Photoluminescence;
- Solid-State Physics