Modeling the timedependent transient radiation response of semiconductor junctions
Abstract
Analytical onedimensional timedependent photocurrent models are developed from new solutions to the ambipolar transport equation. The pn junction model incorporates the effects of an electric field in the quasineutral region, finite diode length, and an arbitrary generation function g = f(x,t). It provides improved accuracy over the WirthRogers and EnlowAlexander models. An approximate photocurrent solution for pnn(+), npp(+), and pin diode junctions is developed considering highinjection effects. Comparison with experimental data shows that a single set of physical parameters is adequate to characterize the model with respect to dose rate, pulse width, and geometry.
 Publication:

IEEE Transactions on Nuclear Science
 Pub Date:
 December 1992
 DOI:
 10.1109/23.211417
 Bibcode:
 1992ITNS...39.2158W
 Keywords:

 Radiation Effects;
 Semiconductor Junctions;
 Time Dependence;
 Transient Response;
 Ambipolar Diffusion;
 Doped Crystals;
 Electric Current;
 PIN Junctions;
 PN Junctions;
 Photoconductivity;
 Electronics and Electrical Engineering