Mechanism for single-event burnout of power MOSFETs and its characterization technique
Abstract
A novel characterization technique for single event burnout (SEB) of power MOSFETs was developed. The technique is based on a pulse-height analyzer system for charge collection measurement with a modified charge-sensitive amplifier which has a very wide dynamic range. The data obtained by this technique give detailed information about the SEB mechanism of power MOSFETs. The experimental data suggested a position-independent charge collection mechanism along an ion track, and a new parameter for SEB hardness was proposed.
- Publication:
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IEEE Transactions on Nuclear Science
- Pub Date:
- December 1992
- DOI:
- Bibcode:
- 1992ITNS...39.1698K
- Keywords:
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- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Single Event Upsets;
- Switching Circuits;
- Energetic Particles;
- Power Transmission;
- Radiation Tolerance;
- Spectroscopy;
- Electronics and Electrical Engineering