38-GHz-band high-power MMIC amplifier module for satellites on-board use
Abstract
This paper presents the design and development results of 38-GHz high-power MMIC amplifier modules for use in the solid state power amplifier (SSPA) to be carried aboard Engineering Test Satellite VI in 1993. This amplifier will be used in millimeter-wave intersatellite communication experiments. For the development of this amplifier, high-power, highly reliable FETs with 0.25 micron-long gates were designed. The FET large-signal impedance was accurately measured using an improved load-pull method and MMIC transformers. The measurements were used to design two types of MMICs: one composed of two FET cells with 600-micron-wide gates, and the other of four FET cells with 400-micron-wide gates. In addition, a two-stage amplifier package was developed consisting of two of these MMICs that can be used at 38 GHz. A Po (1 dB) of 25 dB and a gain of 11 dB were obtained. A 38-GHz test conducted during chip screening achieves a high production yield without circuits adjustment.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- June 1992
- DOI:
- 10.1109/22.141354
- Bibcode:
- 1992ITMTT..40.1215S
- Keywords:
-
- Integrated Circuits;
- Microwave Amplifiers;
- Power Amplifiers;
- Spacecraft Electronic Equipment;
- Field Effect Transistors;
- Millimeter Waves;
- Satellite Communication;
- Spacecraft Modules;
- Electronics and Electrical Engineering