Temperature rise at mirror facet of CW semiconductor lasers
Abstract
A relationship is derived for the temperature rise at the mirror facet of semiconductor lasers. The analytical result is based on the model of Henry et al. (1979) as applied to CW lasers and a thermal model. The effects of active layer length and its thickness, surface recombination velocity, output intensity, and an effective thermal length are delineated for the temperature rise. A comparison with experimental results reported in the literature shows good agreement for the facet temperature rise. A by-product is an approximate relationship for the temperature distribution along the lasing direction.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- March 1992
- DOI:
- 10.1109/3.124987
- Bibcode:
- 1992IJQE...28..635Y
- Keywords:
-
- Continuous Wave Lasers;
- Flat Surfaces;
- Laser Heating;
- Mirrors;
- Semiconductor Lasers;
- Laser Outputs;
- Lasing;
- Temperature Distribution;
- Lasers and Masers