Quantum hole transport at the heterointerface of long wavelength avalanche photodiodes
Abstract
Quantum hole transport at the heterointerfaces of InGaAsInP long wavelength avalanche photodiodes is studied using the Wigner function model. At the heterointerface, three types of quantum size structures are inserted to eliminate the photoexcited hole trapping: the thin quaternary layer, the thin graded bandgap layer, and the doping interface dipole layer. The dependence of hole accumulation on the inserted layer structure is discussed. It is shown that the theoretical reduction limits of hole pileup can be realized even by the insertion of quantum size layers.
 Publication:

IEEE Journal of Quantum Electronics
 Pub Date:
 January 1992
 DOI:
 10.1109/3.119489
 Bibcode:
 1992IJQE...28...25M
 Keywords:

 Avalanche Diodes;
 Holes (Electron Deficiencies);
 Indium Gallium Arsenides;
 Indium Phosphides;
 Photodiodes;
 SolidSolid Interfaces;
 Transport Properties;
 Boltzmann Transport Equation;
 Doped Crystals;
 Hole Mobility;
 Quantum Mechanics;
 Trapped Particles;
 SolidState Physics