Quantum hole transport at the heterointerface of long wavelength avalanche photodiodes
Abstract
Quantum hole transport at the heterointerfaces of InGaAs-InP long wavelength avalanche photodiodes is studied using the Wigner function model. At the heterointerface, three types of quantum size structures are inserted to eliminate the photoexcited hole trapping: the thin quaternary layer, the thin graded band-gap layer, and the doping interface dipole layer. The dependence of hole accumulation on the inserted layer structure is discussed. It is shown that the theoretical reduction limits of hole pile-up can be realized even by the insertion of quantum size layers.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- January 1992
- DOI:
- 10.1109/3.119489
- Bibcode:
- 1992IJQE...28...25M
- Keywords:
-
- Avalanche Diodes;
- Holes (Electron Deficiencies);
- Indium Gallium Arsenides;
- Indium Phosphides;
- Photodiodes;
- Solid-Solid Interfaces;
- Transport Properties;
- Boltzmann Transport Equation;
- Doped Crystals;
- Hole Mobility;
- Quantum Mechanics;
- Trapped Particles;
- Solid-State Physics