A GaAs memory device utilizing a buried JFET channel for nondestructive charge sensing
Abstract
A new GaAs memory cell consists of a monolithic element in which a P-i-N-i-P epitaxial structure stores charge and a buried p-channel FET senses charge. Measured storage times up to 40 s were observed at 300 K with minimal effects on charge decay for applied drain voltages of VDS = +/-1.5 V. Electrical write and erase techniques are demonstrated and discussed.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- March 1992
- DOI:
- 10.1109/55.144992
- Bibcode:
- 1992IEDL...13..146H
- Keywords:
-
- Electric Charge;
- Gallium Arsenides;
- Jfet;
- Memory (Computers);
- Bipolar Transistors;
- Computer Storage Devices;
- Epitaxy;
- Field Effect Transistors;
- Integrated Circuits;
- P-I-N Junctions;
- Electronics and Electrical Engineering