High-frequency performance for sub-0.1 micron gate InAs-inserted-channel InAlAs/InGaAs HEMT
Abstract
The high-frequency performance of a sub-0.1-micron gate InAlAs/InGaAs HEMT with a thin InAs layer inserted into the InGaAs channel is examined. The transconductance is 2.1 S/mm and the current-gain cutoff frequency is 264 GHz using a 0.08-micron-long gate.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1992
- DOI:
- 10.1049/el:19920776
- Bibcode:
- 1992ElL....28.1230A
- Keywords:
-
- Gates (Circuits);
- High Electron Mobility Transistors;
- High Frequencies;
- Indium Arsenides;
- Aluminum Arsenides;
- Crystal Lattices;
- Indium Gallium Arsenides;
- Molecular Beam Epitaxy;
- Transconductance;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering