InAs/Ga0.47In0.53As quantum wells: A new III-V materials system for light emission in the mid-infrared wavelength range
We propose the use of strained InAs/Ga0.47In0.53As quantum wells (QWs) for light emission in the technologically important mid-IR wavelength range. Temperature dependent photoluminescence measurements on single QWs demonstrate that light emission at room temperature is obtained from all samples having InAs QW widths between 2 and 23 monolayers. Luminescence up to 2.4 μm is obtained at 300 K, which is the longest wavelength achieved so far for QWs grown on InP. These results demonstrate the potential of the InAs/Ga0.47In0.53As QW materials system for the fabrication of optoelectronic devices operating in the mid-IR.