Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy

The first chemical-beam-epitaxy (CBE) growth of InP was achieved using bisphosphinoethane (BPE) as a group V source. The samples were grown in a MBE system with a diffusion-pumped chamber and a custom gas manifold. The CBE-grown InP exhibited mirrorlike surface morphology and excellent reflection high-energy electron diffraction patterns. For a 2.0-micron thick InP epitaxial layer, the room-temperature and the 77-K Hall mobilities were found to be 4200 sq sm/V sec and 22,000 sq cm/V sec, respectively, with carrier densities of 5.7 x 10 exp 15/cu cm and 4.0 x 10 exp 15/cu cm, respectively.