Interface states in regrown GaAs p-n junctions by selective molecular beam epitaxy
Abstract
We report the first evaluation of interface states present in GaAs p-n junctions regrown on a SiO2 masked substrate by selective molecular beam epitaxy. A constant-capacitance deep-level transient spectroscopy (CC-DLTS) method is extended to the regrown p-n junction case, and a technique to distinguish the DLTS signal emerging from bulk and interface states is employed. The extracted interface state density is in good agreement with predictions based on the unified disorder-induced gap state model.
- Publication:
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Applied Physics Letters
- Pub Date:
- July 1992
- DOI:
- Bibcode:
- 1992ApPhL..61..297I
- Keywords:
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- Gallium Arsenides;
- Interface Stability;
- Molecular Beam Epitaxy;
- P-N Junctions;
- Carrier Density (Solid State);
- Electron Emission;
- Silicon Oxides;
- Substrates;
- Solid-State Physics