Enhancement of flux pinning by H + and Xe + irradiation in epitaxial thin films of Ba2YCu3O7 - delta

doi:10.1063/1.106824

Enhancement of flux pinning by H⁺ and Xe⁺ irradiation in epitaxial thin films of Ba₂YCu₃O_{7 - delta}

Epitaxial Ba₂YCu₃O_7-δ (BYCO) films grown by the ex situ BaF₂ process are comparable to single crystals both in crystalline quality and the value and temperature dependence of the critical current (J_c) in an applied magnetic field in the BYCO (001) direction of H_a=0.9 T. With the appropriate dose of either 2 MeV H⁺ or ¹³⁵Xe⁺, we can enhance J_c by a factor of 2 in H_a=0.9 T with little effect on T_c. This is significantly greater than the ∼25% enhancement previously reported for epitaxial BYCO films grown by in situ techniques [Roas, Hensel, and Saemann-Ischenko, Appl. Phys. Lett. 54, 1051 (1989)]. This provides the opportunity to isolate the induced defects and study their properties.

Publication:

Applied Physics Letters

Pub Date:

June 1992

DOI:

10.1063/1.106824

Bibcode:

1992ApPhL..60.2932S

Keywords:

Epitaxy;
Flux Pinning;
High Temperature Superconductors;
Hydrogen Ions;
Ion Irradiation;
Microstructure;
Thin Films;
Barium Oxides;
Copper Oxides;
Crystal Defects;
Current Density;
Single Crystals;
Xenon;
Yttrium Oxides;
Solid-State Physics

NASA/ADS

Enhancement of flux pinning by H + and Xe + irradiation in epitaxial thin films of Ba2YCu3O7 - delta

Abstract

Enhancement of flux pinning by H⁺ and Xe⁺ irradiation in epitaxial thin films of Ba₂YCu₃O_{7 - delta}