Optical properties of free-standing silicon quantum wires
Abstract
We present theoretical studies of the optical properties of free-standing Si quantum wires, using an empirical tight-binding model which includes d orbitals and second-neighbor interactions. The excitonic effects are included within the effective-mass approximation. The predicted exciton transition energy for a quantum wire with a width of 27 Å agrees with the observed luminescence for a sample of similar size. We found that the thermally averaged exciton oscillator strengths for quantum wires with widths around 8 Å can become comparable to that of bulk GaAs.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1992
- DOI:
- 10.1063/1.106927
- Bibcode:
- 1992ApPhL..60.2525S
- Keywords:
-
- Hamiltonian Functions;
- Optical Properties;
- Quantum Optics;
- Silicon;
- Band Structure Of Solids;
- Conduction Bands;
- Electron Transitions;
- Energy Gaps (Solid State);
- Oscillator Strengths;
- Solid-State Physics