Low-defect-density germanium on silicon obtained by a novel growth phenomenon
Abstract
Heteroepitaxial Ge on Si has been grown using molecular beam epitaxy at a Si substrate temperature of 900 °C. Electron microscopy results reveal a highly faceted interface, indicating localized Ge melting and subsequent local alloying with Si. Furthermore, this phenomenon is associated with extensive threading dislocation confinement near the Ge/Si interface. Etch pit density measurements obtained on Ge heteroepitaxial films that have undergone interfacial melting are as low as 105 cm-2.
- Publication:
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Applied Physics Letters
- Pub Date:
- February 1992
- DOI:
- Bibcode:
- 1992ApPhL..60..844M
- Keywords:
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- Crystal Defects;
- Germanium;
- Low Density Materials;
- Molecular Beam Epitaxy;
- Silicon;
- Energy Gaps (Solid State);
- Melts (Crystal Growth);
- Solid-Solid Interfaces;
- Thin Films;
- Solid-State Physics