Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxy
Abstract
Lattice-matched epitaxial growth of 3C-SiC on 6H-SiC substrates using an alternate supply of disilane (Si2H6) and acetylene (C2H2) gas molecular beams in a high vacuum was carried out. On 6H-SiC(0001¯) substrates, epilayers of 3C-SiC(1¯1¯1¯) with a double-positioning twin structure were obtained. On the other hand, single crystalline 3C-SiC(001) epilayers without twin structure were obtained on 6H-SiC(01¯14¯) substrates even at low temperatures down to 850 °C.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 1992
- DOI:
- 10.1063/1.107430
- Bibcode:
- 1992ApPhL..60..824Y
- Keywords:
-
- Lattice Parameters;
- Molecular Beam Epitaxy;
- Semiconductors (Materials);
- Silicon Carbides;
- Single Crystals;
- Acetylene;
- Crystallinity;
- Electron Diffraction;
- Silanes;
- Vapor Deposition;
- Solid-State Physics