A 36 ghz gaas oscillator with a mesfet in single side source grounded configuration
Abstract
This paper presents an oscillator design using a new concept of a fet model, which allows to characterize the single side source grounded configuration of a fet, and therefore to predict the oscillator frequency in the millimetre wave range very precisely. The freerunning oscillator was fabricated on a GaAs chip. At 36 GHz an output power of 14 dBm, and an external quality factor of greater than 100 was achieved.
- Publication:
-
Annals of Telecommunications
- Pub Date:
- November 1992
- DOI:
- 10.1007/BF02998316
- Bibcode:
- 1992AnTel..47..533B
- Keywords:
-
- Field Effect Transistors;
- Microwave Oscillators;
- Millimeter Waves;
- Design Analysis;
- Gallium Arsenides;
- Microstrip Transmission Lines;
- Q Factors;
- Resonant Frequencies;
- Electronics and Electrical Engineering;
- Microwave oscillator;
- Millimetric wave;
- Metal semiconductor field effect transistor;
- Circuit design;
- Oscillateur hyperfréquence;
- Onde millimétrique;
- Transistor effet champ barrière Schottky;
- Conception circuit