Silicon carbide, a semiconductor for space power electronics
Abstract
After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.
- Publication:
-
Presented at the 8th Symposium on Space Nuclear Power Systems
- Pub Date:
- 1991
- Bibcode:
- 1991snps.symp....6P
- Keywords:
-
- Crystal Growth;
- Field Effect Transistors;
- P-N Junctions;
- Semiconductors (Materials);
- Silicon Carbides;
- Spacecraft Power Supplies;
- Vapor Deposition;
- Wafers;
- Additives;
- Boules;
- Etching;
- Fabrication;
- High Temperature Environments;
- Metallizing;
- Oxidation;
- Reactivity;
- Single Crystals;
- Solid-State Physics