Temperature effects in ion beam mixing of oxide-oxide interfaces
Abstract
Ion beam mixing of thin oxide films, Cr2O3 and ZrO2, on sapphire substrates has been studied. The systems were chosen according to their solubilities in alpha-Al2O3. Cr2O3 is completely soluble, while ZrO2 is insoluble. Mixing experiments were performed on 50 nm-thick Cr2O3 and ZrO2 films deposited on alpha-Al2O3 by radio frequency (RF) sputter deposition. The specimens were bombarded with Cr(+) at an energy of 160 keV to a fluence of 4 x 10(exp 16) ions/sq cm. Implantations were performed at 25 and 860 C. Rutherford backscattering spectroscopy was performed to analyze any interface modifications due to the bombardment. No detectable mixing was observed in either system for irradiations performed at 25 C, but a small amount of ballistic mixing was observed in both systems at 860 C.
- Publication:
-
Presented at the Annual Fall Meeting of the Materials Research Society
- Pub Date:
- 1991
- Bibcode:
- 1991mrs..meetR...2J
- Keywords:
-
- Chromium Oxides;
- Ion Implantation;
- Radiation Effects;
- Solid-Solid Interfaces;
- Solubility;
- Temperature Effects;
- Zirconium Oxides;
- Aluminum Oxides;
- Annealing;
- Chromium;
- Ion Beams;
- Metal Ions;
- Mixing;
- Oxide Films;
- Sapphire;
- Spectroscopy;
- Solid-State Physics