Etching of HFCVD diamond films in air, nitrous oxide and argon
Abstract
Various methods of etching of diamond films synthesized by hot filament assisted chemical vapor deposition (HFCVD) were investigated. Oxidation at elevated temperatures was studied in air and nitrous oxide at one atmosphere pressure while etching in argon plasma was investigated at low pressures and substrate temperatures. Changes in the morphology and structure of the diamond films due to etching were characterized by SEM, X-ray and Raman spectroscopy. The oxidation rates of polycrystalline films are shown to be intermediate between the oxidation rates of 111 and 100 faces of natural diamond. Use of low temperature argon plasma for etching leads to etching rates which are of the same order of magnitude as the oxidation rate in air at 973 K and improves surface finish of the films.
- Publication:
-
New Diamond Science and Technology
- Pub Date:
- 1991
- Bibcode:
- 1991mrs..conf..827T
- Keywords:
-
- Argon;
- Diamond Films;
- Nitrous Oxides;
- Plasma Etching;
- Vapor Deposition;
- Electron Microscopy;
- Microstructure;
- Oxidation;
- Raman Spectroscopy;
- Thin Films;
- X Ray Spectroscopy;
- Solid-State Physics