A TEM study of layers grown on copper using carbon-ion-implantation
Abstract
It has been found that diamond layers can be grown on certain materials, most importantly nickel and copper, by means of carbon ion implantation, termed implanted-atom-out-diffusion-epitaxy (IAOE) in this study. These materials have lattice constants close to that of diamond, and so do not dissolve or react chemically with the carbon atoms under the implantation conditions employed. Accordingly, the implanted carbon atoms diffuse to a nearby surface where they arrange themselves, under the influence of the lattice forces and symmetry of the host material, to form diamond. TEM results are reported for some of the layers grown on copper using the IAOE technique. The results show that the process depends on epitaxial forces. It is stated that this technique for the heteroepitaxial growth of diamond layers can lead to the diamond wafer, which is needed for new applications in the electronics and optoelectronic fields.
- Publication:
-
New Diamond Science and Technology
- Pub Date:
- 1991
- Bibcode:
- 1991mrs..conf..561P
- Keywords:
-
- Copper;
- Crystal Growth;
- Diamond Films;
- Electron Microscopy;
- Ion Beams;
- Ion Implantation;
- Transmission Electron Microscopy;
- Crystal Lattices;
- Metal Surfaces;
- Substrates;
- Solid-State Physics