Defect structure of semiconducting and insulating epitaxial oxides

The study of the defect structure of semiconducting and insulating epitaxial oxides has continued. During this period, the growth and characterization of epitaxial BaTiO3 and SrTiO3 layers were undertaken. For the growth of the epitaxial oxides, an organometallic chemical vapor deposition technique was developed. For the deposition of BaTiO3, we developed and used the second generation Ba precursor, barium (hexafluoroacetylacetonate)2 (tetraglyme)(Ba(hfa)2 (single bond) tet) along with titanium tetraisoproxide as the titanium precursor. Recently, we have succeeded in depositing epitaxial BaTiO3 by using single crystalline LaAlO3 substrates. This development should significantly improve our electronic property and defect structure measurements since grain boundaries are eliminated in the layers. The structure of the epitaxial BaTiO3 was examined using both x ray diffractometer measurements and high resolution transmission electron microscopy (HRTEM).