Hardening communication ports for survival in electrical overstress environments
Abstract
Greater attention is being focused on the protection of data I/O ports since both experience and lab tests have shown that components at these locations are extremely vulnerable to electrical overstress (EOS) in the form of transient voltages. Lightning and electrostatic discharge (ESD) are the major contributors to these failures; however, these losses can be prevented. Hardening against transient voltages at both the board level and system level has a proven record of improving reliability by orders of magnitude. The EOS threats, typical failure modes, and transient voltage mitigation techniques are reviewed. Case histories are also reviewed.
- Publication:
-
In NASA. Kennedy Space Center
- Pub Date:
- August 1991
- Bibcode:
- 1991agcl....1Q....C
- Keywords:
-
- Electric Potential;
- Electrostatics;
- Ground Effect (Communications);
- Lightning;
- Position (Location);
- Radiation Hardening;
- Failure Modes;
- Protection;
- Reliability;
- Survival;
- Electronics and Electrical Engineering